Riassunto analitico
The growing adoption of Gallium Nitride (GaN) devices has revolutionized the power electronics industry due to their superior efficiency and switching speed compared to traditional silicon-based technologies. However, accurately characterizing the dynamic parameters of these devices remains a technical challenge, critical for optimizing their use in demanding applications.
This thesis focuses on the design and implementation of a Double Pulse Test (DPT) setup for the characterization of 650 V GaN devices and other kinds of semiconductor devices. Specifically, the proposed setup enables the extraction of Gate Charge (QG) and the evaluation of Dynamic On-Resistance (RON), which are key parameters for understanding device behaviour under real operating conditions.
The system design integrates advanced simulations conducted in LTSpice with a practical implementation optimized to ensure accuracy and minimize the effects of external disturbances. Experimental results demonstrate the reliability of the proposed method and provide a clear picture of the dynamic performance of the power semiconductor devices, contributing to their enhanced integration into advanced power systems.
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