Riassunto analitico
The goal of this thesis is to investigate the behaviour GaN power devices in High stress condition. Wide BandGap devices have replaces Si devices in High Performance field, due to lower losses,higher temperature capability and higher switching frequency. In this thesis we will characterize GaN power devices and in particular the Ron and Vth behaviour in Low and High-Side bias condition. The shift of both those parameters is expected in high stress condition due to the trapping phenomena and during the high-side configuration measure due to the additional voltage applied to the bulk.
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