Riassunto analitico
This study investigates the potential of Thin Film Transistors (TFTs) based on oxide semiconductors, with a particular emphasis on amor- phous Indium-Gallium-Zinc-Oxide (a-IGZO), as a novel material to replace conventional silicon in electronic applications. Silicon has long been the standard semiconductor material in electronics, and this study seeks to evaluate the performance, characteristics, and poten- tial advantages of a-IGZO as a substitute.
The investigation started with a comprehensive analysis of a-IGZO’s electronic properties and its compatibility with various electronic de- vices. Then, we explored amorphous indium gallium zinc oxide (a- IGZO) as a channel material in metal oxide-semiconductor field-effect transistors (MOSFETs). To this end, we implemented a Sentaurus Synopsis TCAD deck for the simulation of a realistic long-channel MOSFET architecture featuring IGZO channel material. The study was conducted to assess the static and AC small signal performance of the device, and to compare them with available experimental data from a research-level prototype. The primary objective was to elu- cidate the material’s behavior by conducting simulations of current- voltage (I-V), capacitance-voltage (C-V) curves and cutoff frequency fT curves.
The initial simulations were carried out under the conditions of an intrinsic channel, providing a baseline understanding of a-IGZO’s inherent electrical characteristics. Subsequently, the investigation delved deeper by introducing density of states from material traps and bandtail traps in the bandgap.
These modifications aimed to emulate real-world conditions and evaluate the material’s response in the presence of potential traps and defects. The impact of a few material and geometry parameters on the performance has been extracted. The results show good promise to achieve adequate performance for very basic IoT devices (e.g. low power RF tags) fabricated with this new technology.
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